| PART |
Description |
Maker |
| DG421DJ DG421DK DG421DY DG423DJ DG423DK DG423DN DG |
Improved Low-Power / CMOS Analog Switches with Latches
Improved Low-Power CMOS Analog Switches with Latches
Improved Low-Power, CMOS Analog Switches with Latches
|
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| WSLS2512 WSLS25125L000DGEA WSLS25125L000DGEK WSLS2 |
Improved Stability (0.25 % and 0.5 %), Power Metal Strip? Resistors Low Value (0.01 Ω to 0.1 Ω), Surface Mount
Improved Stability (0.25 % and 0.5 %), Power Metal Strip庐 Resistors Low Value (0.01 惟 to 0.1 惟), Surface Mount
Improved Stability (0.25 % and 0.5 %), Power Metal Strip垄莽 Resistors Low Value (0.01 楼? to 0.1 楼?), Surface Mount
Improved Stability (0.25 % and 0.5 %), Power Metal Strip㈢ Resistors Low Value (0.01 ヘ to 0.1 ヘ), Surface Mount
|
Vishay Siliconix
|
| TDA4863G TDA4863 Q67040-A4451 Q67040-S4452 |
Power Control ICs - Improved PFC-IC for in SMD-Package
Power Control ICs - Improved PFC-IC for DCM
Boost Controller
|
Philips Semiconductors
INFINEON[Infineon Technologies AG]
|
| DG409CY DG408AK DG408C_D DG408CJ DG408CY DG408DJ D |
iMPROVED / 8-cHANNEL/dUAL 4-cHANNEL / cmos aNALOG mULTIPLEXERS
iMPROVED, 8-cHANNEL/dUAL 4-cHANNEL, cmos aNALOG mULTIPLEXERS DUAL 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, UUC18
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
|
| DG309BDY DG309B DG308BDJ DG308BDQ DG308BDY DG309BD |
Improved Quad CMOS Analog Switches
|
VISAY[Vishay Siliconix]
|
| LTC7541A-15 |
Improved Industry Standard CMOS 12-Bit Multiplying DAC
|
Linear Technology
|
| LTC7541AKNPBF |
Improved Industry Standard CMOS 12-Bit Multiplying DAC
|
Linear Technology
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
